MRF6P21190HR6
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6P21190HR6 Test Circuit Schematic
Z15, Z16 0.289″
x 0.712″
Microstrip
Z17, Z18 0.127″
x 0.200″
Microstrip
Z19, Z20 0.288″
x 0.067″
Microstrip
Z21 0.088″
x 0.067″
Microstrip
Z22 1.830″
x 0.067″
Microstrip
Z23 1.140″
x0.114″
Microstrip
Z24 0.850″
x 0.066″
Microstrip
PCB Taconic RF--35, 0.030″,
εr
=3.5
Z1 0.850″
x 0.067″
Microstrip
Z2 1.140″
x0.114″
Microstrip
Z3 1.830″
x 0.067″
Microstrip
Z4 0.088″
x 0.067″
Microstrip
Z5, Z6 0.250″
x 0.067″
Microstrip
Z7, Z8 0.324″
x 0.178″
Microstrip
Z9, Z10 0.143″
x 0.655″
Microstrip
Z11, Z12 0.111″
x 0.655″
Microstrip
Z13, Z14 0.124″
x 0.712″
Microstrip
RF
INPUT
C3
R1
C4
+
C2
VBIAS
R2
B2
B1
C5
C6
+
Z6
Z8
Z10
Z12
C1
Z5
Z7
Z9
Z11
C7
Z1
Z2
Z3
DUT
C9
R3
C10
+
C8
R4
B4
B3
C11
C12
+
C14
+
C15
C19
C16
C17
C18
+
C20
+
C21
+
VSUPPLY
Z14
Z16
Z18
Z20
C13
Z13
Z15
Z17
Z19
C22
C23
+
C24
C28
C25
C26
C27
+
C29
+
C30
+
VSUPPLY
RF
Z24
OUTPUT
Z23
VBIAS
Z4
Z22
Z21
Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2, B3, B4
RF Beads
2743019447
Fair--Rite
C1, C7
30 pF Chip Capacitors
ATC100B300JT500XT
ATC
C2, C8, C15, C24
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C3, C9, C18, C27
1k pF Chip Capacitors
ATC100B102JT50XT
ATC
C4, C10
1
μF, 50 V Tantalum Chip Capacitors
T491C105K050AT
Kemet
C5,C11,C17,C26
0.1
μF Chip Capacitors
CDR33BX104AKWT
Kemet
C6, C12
100
μF, 50 V Electrolytic Capacitors, Radial
EEEFK1H101P
Panasonic
C13, C22
43 pF Chip Capacitors
ATC100B430JT500XT
ATC
C14, C19, C20, C23,
C28, C29
22
μF, 35 V Tantalum Chip Capacitors
T491X226K035AT
Kemet
C16, C25
0.56
μF Chip Capacitors
C1825C564J5RAC
Kemet
C21, C30
470
μF, 63 V Electrolytic Capacitors, Radial
477KXM063M
Illinois Capacitor
R1, R3
1kΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
R2, R4
12
Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
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相关代理商/技术参数
MRF6P21190HR6_06
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
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制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190HR5
功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P24190HR5
功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P24190HR6
功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P24190HR6_08
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